? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm d88 2 to-126 w (to-126 transistors) description description description description np n si transistor suited for the output stage of 3w audio amplifier, voltage regulator, dc-dc converter and relay driver. np n O?m 3w ?l??{ dc-dc D Q^? features features features features c low saturation voltage ?? excellent h fe linearity and high h fe t??????? maximum maximum maximum maximum ratings ratings ratings ratings ~? (t (t (t (t a a a a =25 =25 =25 =25 ) ) ) ) characteristic ? symbol ? rating ~? unit collector-base voltage ?O - O? v cbo 40 v collect-emitter voltage ?O - lO? v ceo 30 v emitter-base voltage lO - O? v ebo 5.0 v collector current dc ?O - ic 3.0 a collector current pulse ?O - ic 7.0 a collector power dissipation ?O? p c 3 w junction temperature Y t j 150 storage temperature range ? t stg -55 ? 150
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm d88 2 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t (t (t (t a a a a =25 =25 =25 =25 unless unless unless unless otherwise otherwise otherwise otherwise noted noted noted noted of?? 25 ) ) ) ) device device device device marking marking marking marking h h h h fe fe fe fe range range range range ????n characterstic ? symbol ? test condition y?l min ? typ ? max ? unit collector cutoff current ?O? i cbo v cb =30v,i e =0 1.0 a emitter cutoff current lO? i ebo v eb =5v,i c =0 1.0 a collector-base breakdown voltage ?O - O? v (br)cbo i c =100 a 40 v collector-emitter breakdown voltage ?O - lO? v (br)ceo i c =10ma 30 v emitter-base breakdown voltage lO - O? v (br)ebo i e =100 a 5 v dc current gain ? h f e (1) v ce = 2 v,i c = 20 a 30 h f e (2) v ce = 2 v,i c = 1 a 60 400 collector saturation voltage ?O?? v ce(sat) i c = 2 a, i b = 200 ma 0.3 0. 5 v base saturation voltage O?? v be(sat) i c = 2 a, i b = 200 ma 1.0 2 .0 v transition frequency l f t v ce =5v,i c =10 0 ma 9 0 mhz collector output capacitance ? c ob v cb =10v,i e =0,f=1mhz 55 pf gm gm gm gm gm gm gm gm d88 d88 d88 d88 2 2 2 2 d88 d88 d88 d88 2 2 2 2 p p p p e e e e 160-320 160-320 160-320 160-320 20 20 20 20 0~400 0~400 0~400 0~400 p p p p e e e e
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm d88 2
|
